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机译:Implementation of Synaptic Device Using Ultraviolet Ozone Treated Water-in-Bisalt/Polymer Electrolyte-Gated Transistor
Seoul Natl Univ, Grad Sch Convergence Sci & Technol, Program Nano Sci & Technol, Gwanak Ro 1, Seoul 08826, South Korea;
Seoul Natl Univ, Grad Sch Convergence Sci & Technol, Program Nano Sci & Technol, Gwanak Ro 1, Seoul 08826, South Korea|Samsung Display Co Ltd, 1 Samsung Ro, Yongin 17113, Gyeonggi Do, South Korea;
Seoul Natl Univ, Grad Sch Convergence Sci & Technol, Dept Appl Bioengn, Gwanak Ro 1, Seoul 08826, South KoreaSeoul Natl Univ, Coll Engn, Sch Chem & Biol Engn, Gwanak Ro 1, Seoul 08826, South KoreaKyung Hee Univ, Dept Elect Engn, Yongin 17104, Gyeonggi Do, South KoreaSeoul Natl Univ, Grad Sch Convergence Sci & Technol, Program Nano Sci & Technol, Gwanak Ro 1, Seoul 08826, South Korea|Seoul Natl Univ, Coll Engn, Sch Chem & Biol Engn, Gwanak Ro 1, Seoul 08826, South Korea|Seoul Natl Univ, Grad Sch Convergence Sci & TechSeoul Natl Univ, Grad Sch Convergence Sci & Technol, Program Nano Sci & Technol, Gwanak Ro 1, Seoul 08826, South Korea|Seoul Natl Univ, Coll Engn, Sch Chem & Biol Engn, Gwanak Ro 1, Seoul 08826, South Korea;
artificial synapse; electrolyte-gated transistor; long-term synaptic plasticity; neuromorphic device; water-in-bisalt; polymer electrolyte;