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Cs4CuSb2Cl12-x I (x) (x=0-10) nanocrystals for visible light photodetection

机译:用于可见光光探测的Cs4CuSb2Cl12-x I(x)(x=0-10)纳米晶

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摘要

Lead-free layered double perovskite nanocrystals (NCs) with tunable visible range emission, high carrier mobility and low trap density are the need of the hour to make them applicable for optoelectronic and photovoltaic devices. Introduction of Cu2+ in the high band gap Cs3Sb2Cl9 lattice transforms it to the monoclinic Cs4CuSb2Cl12 (CCSC) NCs having a direct band gap of 1.96 eV. The replacement of 50 Cl- by I- ions generates <5 nm Cs4CuSb2Cl6I6 (C6I6) monodispersed NCs with an unchanged crystal system but with further lowering of the band gap to 1.92 eV. The p-type C6I6 NCs exhibit emission spectra, lower trap density, appreciable hole mobility and most importantly a lower exciton binding energy of only 50.8 +/- 1.3 meV. The temperature dependent photoluminescence (PL) spectra of the C6I6 NCs show a decrease in non-radiative recombination from 300 K down to 78 K. When applied as the photoactive layer in out-of-plane photodetector devices, C6I6 NC devices exhibit an appreciable responsivity of 0.67 A W-1 at 5 V, detectivity of 4.55 x 10(8) Jones (2.5 V), and fast photoresponse with rise and fall time of 126 and 94 ms, respectively. On the other hand, higher I- substitution in Cs4CuSb2Cl2I10 NCs (C2I10) degrades the lattice into a mixture of monoclinic and trigonal crystal phases, which also lowers the device performance.
机译:无铅层状双钙钛矿纳米晶体 (NC) 具有可调可见光范围发射、高载流子迁移率和低陷阱密度,是适用于光电和光伏器件的当务之急。在高带隙Cs3Sb2Cl9晶格中引入Cu2+,将其转化为直接带隙为1.96 eV的单斜晶系Cs4CuSb2Cl12(CCSC)NCs。I-离子取代50%Cl-可生成<5 nm的Cs4CuSb2Cl6I6(C6I6)单分散NCs,晶系不变,但带隙进一步降低至1.92 eV。p 型 C6I6 NC 表现出发射光谱、较低的陷阱密度、可观的空穴迁移率,最重要的是,激子结合能较低,仅为 50.8 +/- 1.3 meV。C6I6 NC的温度相关光致发光(PL)光谱显示非辐射复合从300 K下降到78 K。当作为面外光电探测器器件中的光敏层应用时,C6I6 NC 器件在 5 V 时表现出 0.67 A W-1 的明显响应度、4.55 x 10(8) Jones (2.5 V) 的检测率和快速光响应,上升和下降时间分别为 126 ms 和 94 ms。另一方面,Cs4CuSb2Cl2I10 NCs(C2I10)中较高的I-取代会使晶格降解为单斜晶相和三角晶相的混合物,这也降低了器件性能。

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