Atomically Thin Antimony-Doped Indium Oxide Nanosheets for Optoelectronics

摘要

Wide bandgap semiconducting oxides are emerging as potential 2D materialsfor transparent electronics and optoelectronics. This fuels the quest for discoveringnew 2D metal oxides with ultrahigh transparency and high mobility.While the former can be achieved by reducing the thickness of oxide filmsto only a few nanometers, the latter is more commonly realized by intentionaldoping. This article reports a one-step synthesis of few-unit-cell-thickand laterally large antimony-doped indium oxide (IAO). The doping processoccurs spontaneously when the oxide is grown on the surface of a moltenSb–In alloy and 2D IAO nanosheets can be easily printed onto desired substrates.With thicknesses at the atomic scale, these materials exhibit excellenttransparency exceeding 98 across the visible and near-infrared range. Fieldeffecttransistors based on low-doped IAO nanosheets reveal a high electronmobility of ≈40 cm~2 V?1 s~(?1). Additionally, a notable photoresponse is observedin 2D IAO-based photodetectors under ultraviolet (UV) radiation. Photoresponsivitiesof low-doped and highly doped IAO at a wavelength of 285 nmare found to be 1.2 × 10~3 and 0.7 × 10~3 A W~(?1), respectively, identifying thesematerials as promising candidates for the fabrication of high-performanceoptoelectronics in the UV region.