首页> 外文期刊>Advanced energy materials >Ultrahigh-Rate and Ultralong-Duration Sodium Storage Enabled by Sodiation-Driven Reconfiguration
【24h】

Ultrahigh-Rate and Ultralong-Duration Sodium Storage Enabled by Sodiation-Driven Reconfiguration

机译:通过钠化驱动的重构实现超高速率和超长持续时间的钠储存

获取原文
获取原文并翻译 | 示例
获取外文期刊封面目录资料

摘要

Despite their variable valence and favorable sodiation/desodiation potential,vanadium sulfides (VS_x) used as anode materials of sodium-ion batteries(SIBs) have been held back by their capacity decline and low cyclingcapability, associated with the structure distortion volume expansion andpulverization. This study reports an accessible process to tackle thesechallenges via fabricating a 3D-VS_x anode for SIBs with ultrahigh-rate andultralong-duration stable sodium storage. The sodiation-driven reactivationof micro-nano 3D-VS_x activates the reconfiguration effect, effectively maintainingstructural integrity. Interestingly, the mechanical degradationof 3D-VS_x over the sodiation process can be controlled by fine-tuning theoperating voltage. The self-reconfigured open nanostructures with largevoid space not only effectively withstand repetitive volume changes andmitigate the damaging mechanical stresses, but also in turn construct aself-optimized shortened ion diffusion pathway. Moreover, the sodiationdrivenreconfiguration excites many active sites and optimizes a stablesolid-electrolyte interface, thereby delivering a reversible capacity of961.4 mA h g~(?1) after 1500 cycles at a high rate of 2 A g~(?1). This work providesnew insight into the rational design of electrodes toward long-lived SIBsthrough sodiation-driven reconfiguration.
机译:尽管硫化钒(VS_x)具有可变的价态和良好的钠化/脱钠电位,但用作钠离子电池(SIBs)负极材料的硫化钒()因其容量下降和低循环能力而受到阻碍,这与结构畸变体积膨胀和粉化有关。本研究报告了一种通过制造具有超高速率和超长持续时间稳定钠储存的 SIB 的 3D-VS_x阳极来应对这些挑战的可行工艺。微纳3D-VS_x的钠化驱动再激活重构效应,有效保持结构完整性。有趣的是,3D-VS_x在钠化过程中的机械降解可以通过微调工作电压来控制。具有大空隙空间的自重构开放纳米结构不仅有效地承受了重复的体积变化,减轻了破坏性的机械应力,而且构建了自优化的缩短离子扩散路径。此外,钠化驱动的重构激发了许多活性位点并优化了稳定的固体-电解质界面,从而在1500次循环后以2 A g~(?1)的高倍率提供961.4 mA h g~(?1)的可逆容量。这项工作为通过钠化驱动的重构向长寿命SIB的电极合理设计提供了新的见解。

著录项

获取原文

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号