In this study, multilevel switching at low-power in Ti/TiN/Ga2O3/Ti/Pt resistive random-access memory (RRAM) devices has been systematically studied. The fabricated RRAM device exhibits an excellent non-overlapping window between set and reset voltages of similar to 1.1 V with a maximum R (off)/R (on) ratio of similar to 10(3). Moreover, to the best of our knowledge, the multi-bit storage capability of these RRAM devices with a reasonably high R (off)/R (on) ratio is experimentally demonstrated, for the first time, for lower compliance currents at 10 mu A, 20 mu A and 50 mu A. The multi-bit resistive switching behavior of the Ga2O3 RRAM device at a low compliance current paves the way for low-power and high-density data storage applications.
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