Abstract ZnO based heterostructures have recently received increased research attention, related to the development of room temperature THz/MiR semiconductor devices. The potential for these applications stems from the combination of wide direct bandgap and high exciton binding energy. In this work, we focus on the intersubband transition between bound states in the conduction band, and apply self-consistent numerical modelling to a system of Schrödinger–Poisson equations to evaluate the electronics structure of coupled semiconductor quantum wells. We subsequently analyse the fractional optical absorption at room temperature, as it varies with layers’ thicknesses, doping density and external electric field magnitude.
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