Constructed Ge Quantum Dots and Sn Precipitate SiGeSn Hybrid Film with High Thermoelectric Performance at Low Temperature Region

摘要

SiGe-based thermoelectric (TE) materials are well-known for high-temperature utilization, but rarely relevant in the low temperature region. Here a Ge quantum dots (QDs) and Sn precipitation SiGeSn hybrid film are constructed via ultrafast high temperature annealing (UHA) of a treated P-ion implantation SiGeSn film on Si/SiO2 substrate. Combining the modulation doping effect dominated by Sn precipitates and the energy filtering effect caused by Ge QDs, the optimized SiGe films achieve a giant power factor as high as 91 mu W cm(-1) K-2 @300 K, room temperature, while maintaining low thermal conductivity. This strategy on film construction provides a novel insight for TE materials with striking performance.