Cathodoluminescence mapping is used as a contactless method to probe the electron concentration gradient of Te-doped GaAs nanowires. The room temperature and low temperature (10 K) cathodoluminescence analysis method previously developed for GaAs:Si is first validated on five GaAs:Te thin film samples, before extending it to the two GaAs:Te NW samples. We evidence an electron concentration gradient ranging from below 1 x 10(18) cm(-3) to 3.3 x10(18) cm(-3) along the axis of a GaAs:Te nanowire grown at 640 degrees C, and a homogeneous electron concentration of around 6-8 x 10(17) cm(-3) along the axis of a GaAs:Te nanowire grown at 620 degrees C. The differences in the electron concentration levels and gradients between the two nanowires is attributed to different Te incorporation efficiencies by vapor-solid and vapor-liquid-solid processes.
展开▼
机译：阴极发光映射作为一种非接触式方法，用于探测Te掺杂GaAs纳米线的电子浓度梯度。先前为GaAs：Si开发的室温和低温（10 K）阴极发光分析方法首先在五个GaAs：Te薄膜样品上进行了验证，然后将其扩展到两个GaAs：Te NW样品。我们证明，在640°C下生长的GaAs：Te纳米线的轴线的电子浓度梯度范围从1 x 10（18） cm（-3）到3.3 x10（18） cm（-3）以下，在620°C下生长的GaAs：Te纳米线的轴线的均匀电子浓度约为6-8 x 10（17） cm（-3）。两种纳米线之间电子浓度水平和梯度的差异归因于气-固和气-液-固过程的不同Te掺入效率。
展开▼
