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CONTEXT-BASED METROLOGY IMPUTATION FOR IMPROVED PERFORMANCE OF COMPUTATIONAL GUIDED SAMPLING

机译:CONTEXT-BASED METROLOGY IMPUTATION FOR IMPROVED PERFORMANCE OF COMPUTATIONAL GUIDED SAMPLING

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The embodiments provided herein disclose a method to identify a location on a wafer using a computational model, and more particularly, a method of correlating wafer data to impute missing metrology data to train the computational model for improved defective die probability modeling. Some embodiments provide an apparatus for identifying a location on a wafer to scan during inspection using a computational defect probability model comprising a memory storing a set of instructions and at least one processor configured to execute the set of instructions to cause the apparatus to perform a method for identifying a location on a wafer to scan during inspection using a computational defect probability model. The method comprises obtaining initial metrology data and initial context data for a plurality of initial wafers, correlating the initial metrology data and initial context data for each wafer of the plurality of initial wafers, correlating a subsequent wafer with the plurality of initial waters based on context data of the subsequent wafer and the initial context data of the plurality of initial wafers, and selecting a location on the subsequent wafer to scan using an inspection tool based on the correlation. In some embodiments, a non-transitory computer readable medium comprising a set of instructions (hat is executable by one or more processors of a computing device to cause the computing device to perform a method for identifying a location on a wafer to scan during inspection is provided. The method comprises obtaining initial metrology data and initial context data for a plurality of wafers. correlating the initial metrology data and initial context data for each wafer of the plurality of wafers, imputing missing data from the plurality of wafers using the correlated initial metrology data and initial context data, and training a computational defect probability model with the imputed missing data and initial metrology data and initial context data for the plurality of wafers. Other advantages of the present disclosure will become apparent from the following description taken in conjunction with the accompanying drawings wherein are set forth, by way of illustration and example, certain embodiments of the present disclosure.

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    《Research Disclosure》 |2023年第710期|709-710|共2页
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