Plasticity of indium antimonide between —176 °C and 400 °C under hydrostatic pressure. Part II: Microscopic aspects of the deformation

摘要

Indium antimonide (InSb) has been plastically deformed over a wide temperature range, from 400 down to —176 °C (see the compan-ion paper: Kedjar B, Thilly L, Demenet JL, Rabier J. Acta Mater 2009) and transmission electron microscopy was used to characterize the deformation microstructures. In the ductile regime, i.e. T> T_(tr1) approx = 150 °C, the crystal deforms via the nucleation and motion of per-fect dislocations belonging to the glide set. In the brittle domain, i.e. for T< T_(tr1) approx = 150 °C, two regimes are observed: for T_(tr2) approx = 20 °C < T < T_(tr1) approx = 150 °C, the crystal deformation takes place via the nucleation and glide of dissociated perfect dislocations or only leading partials, while for T < T_(tr2) approx = 20 °C, the crystal deformation proceeds via the nucleation and motion of perfect disloca-tions belonging to the shuffle set. In view of these observations, the brittle-to-ductile transition (at T_(tr1)) is confirmed to correspond to a change in the dislocation nature in the glide set, from partial-mediated plasticity at low temperature to perfect-mediated plasticity at high temperature. Another transition is observed at T_(tr2) and corresponds to the glide-to-shuffle transition which is observed experimentally for the first time in a III-V compound semiconductor.