Metrology faces severe challenges over the next few years in the control of advanced gate processes. The measurement of thin silicon dioxide, thicker high-k dielectrics, and threshold adjust implants demands the superior capabilities of device-oriented electrical measurements. Elastic probe technology has demonstrated the capacity to measure thin oxides and to differentiate electrical properties not detectable through physical measurements. It also has demonstrated applicability to high-k materials. Elastic probe technology has measured threshold adjust implants successfully and has the potential for closed-loop process control on production wafers.
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