A highhyphen;resolution electron microscopy study of the Sihyphen;SiO2interface

摘要

We have studied the Si‐SiO2interface of a Si‐MOSFET (metal‐oxide‐semiconductor field‐effect transistor) on a (911) surface by high‐resolution electron microscopy. The interface was viewed edge‐on parallel to [011¯] and the Si crystal lattice was directly resolved. The image shows the interface to be smooth to within 4 A˚ and contains a possible indication of a transition layer (∼10 A˚) of nonstoichiometric oxides.