Study of the spectral sensitivity of silicon p-n junctions with a porous silicon film on the surface

摘要

This paper discusses the spectral response of silicon p-n junctions with a thin film of porous silicon on the surface. It is established that the spectral sensitivity becomes several times as great in the short-wavelength region of the visible spectrum. The observed effect is explained by the reduction in the number of active centers in the near-surface layer of single-crystal silicon that occurs during electrochemical anodization of single-crystal silicon.