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Electrical resistivity and hydrogen solubility of PdH_c thin films

机译:PdH_c薄膜的电阻率和氢溶解度

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摘要

During hydrogen gas loading, Pd thin films exhibit an anomalous reduction of resistivity change with decreasing film thickness. In this paper we show that this effect can mainly be attributed to a stress-dependent reduction of hydrogen solubility at a given hydrogen pres-sure. Different stress states of the thin films result from different bonding to a rigid substrate. Strongly buckled thin films show bulk-like pressure-resistivity isotherms. The resistivity changes as a function of hydrogen concentration appear to be independent of film thick-ness. The apparent Sieverts' constant seems to be larger for thin films compared to bulk, and increases with cycling of the thin films.
机译:在氢气负载过程中,随着膜厚的减小,Pd薄膜的电阻率变化异常降低。在本文中,我们表明这种效应主要可归因于在给定氢气浓度下氢溶解度的应力依赖性降低。薄膜的不同应力状态是由于与刚性基板的不同结合造成的。强屈曲薄膜显示出体积状的压力电阻率等温线。电阻率随氢浓度的变化似乎与薄膜厚度无关。与本体薄膜相比,薄膜的表观 Sieverts 常数似乎更大,并且随着薄膜的循环而增加。

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