首页> 外文期刊>Acta materialia >Electronic band structures, dielectric functions and interband transitions of relaxor ferroelectric (1-x) Pb (Sc_(1/2)Ta_(1/2))O_3-xPbHfO_3 ceramics: A spectroscopic reflectance study
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Electronic band structures, dielectric functions and interband transitions of relaxor ferroelectric (1-x) Pb (Sc_(1/2)Ta_(1/2))O_3-xPbHfO_3 ceramics: A spectroscopic reflectance study

机译:弛豫铁电体(1-x)Pb(Sc_(1/2)Ta_(1/2))O_3-xPbHfO_3陶瓷的电子能带结构、介电函数和带间跃迁的光谱反射率研究

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摘要

Electronic band structures and dielectric functions of relaxor ferroelectric (1-x) Pb (Sc_(1/2)Ta_(1/2)) O_3-xPbHfO_3 (PSTH) ceramics (0 < =x <= 0.2) have been investigated by far-IR-UV reflectance spectra. Based on generalized four-parameter damped oscillators and Tauc-Lorentz dispersion models, the dielectric functions from 0.006 to 6 eV have been successfully extracted at room temperature. The status of structural order can be characterized by combining the strength of the Sc-Ta vibrational mode and the dielectric loss in the frequency range of 280-320 cm~(-1). It was found that the electronic structures (which depend closely on the BO_6 (B = Sc, Ta Hf) octahedron) are sensitive to the B-site atom concentration. The interband transitions can be clearly demonstrated by the imaginary part of the dielectric function which corresponds to the transition from the O 2p to B-site (Sc, Ta and Hf) d states and Pb 6p states. The two typical transition energies show the opposite trend with increased PbHfO_3 composition. Remarkable variations of the B-site order degree and the lattice expansion due to the introduction of PbHfO_3 are responsible for modifications of the dielectric function and electronic structures. These results could be crucial for investigating the potential applications of PSTH-based optoelectronic and pyroelectric devices.
机译:采用远红外-紫外反射光谱研究了弛豫铁电体(1-x)Pb(Sc_(1/2)Ta_(1/2))O_3-xPbHfO_3(PSTH)陶瓷(0 < =x <= 0.2)的电子能带结构和介电函数.基于广义四参数阻尼振子和Tauc-Lorentz色散模型,在室温下成功提取了0.006-6 eV的介电函数。结合Sc-Ta振动模式的强度和280-320 cm~(-1)频率范围内的介电损耗,可以表征结构有序状态。研究发现,电子结构(密切依赖于BO_6(B = Sc,Ta Hf)八面体)对B位原子浓度敏感。介电函数的虚部可以清楚地证明带间跃迁,该虚部对应于从 O 2p 到 B 位(Sc、Ta 和 Hf)d 态和 Pb 6p 态的跃迁。随着PbHfO_3组成的增加,两种典型的跃迁能呈现相反的趋势。由于引入PbHfO_3,B位有序度和晶格膨胀的显着变化是介电函数和电子结构改变的原因。这些结果对于研究基于PSTH的光电和热释电器件的潜在应用至关重要。

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