Optimum bulk series resistance of the Schottkyhyphen;barrier solar cell

摘要

We suggest that the efficiency of a Schottky‐barrier (SB) solar cell could be subtantially increased (by as much as 2%) by making an optimum choice of the bulk series resistance (or the dopant concentration in the semiconductor) rather than minimizing it to zero. Thus we show that there exists an optimum nonzero bulk series resistance of SB solar cell for which the power conversion efficiency is maximum. For ann‐type GaAs/Au SB solar cell, this optimum series resistance is calculated to be 0.2 &OHgr; corresponding to a dopant concentration of 8×1013cm−3.