Interface Engineering in 1D ZnO-Based Heterostructures for Photoelectrical Devices

摘要

1D semiconductor materials are widely used in the fields of energy conversion, electronics, and photoelectrical devices, due to their unique ability to connect the nanometer and macroscopic worlds. Among them, 1D-ZnO plays a vital role in the construction of photoelectrical devices due to its easily modulated morphology and band structure. By combining 1D-ZnO with other materials to form a variety of heterostructures, the functional diversity of 1D-ZnO is greatly enriched. Through the means of interface engineering, the behavior of carriers in 1D-ZnO-based heterostructures can be adjusted to optimize its photoelectrical performance. A comprehensive understanding of the different integration methods and interface engineering of 1D-ZnO-based heterostructures can provide new and more effective methods for the design of next-generation photoelectrical devices. In this paper, starting with the precise growth of 1D-ZnO, 1D-ZnO-based heterostructures constructed by traditional epitaxial growth and emerging van der Waals stacking are emphatically summarized. The modulation mechanisms by interface engineering on the photoelectrical performance of the above two types of heterostructures are systematically reviewed. Finally, the opportunities and challenges of interface engineering in 1D-ZnO-based heterostructures for next-generation photoelectrical devices are prospected.