AbstractThe PERC cell (passivated emitter and rear cell) and PERL (passivated emitter and rear locally‐diffiused) cell have recently demonstrated improved cell performance owing to the high quality of surface passivation and high bulk carrier lifetimes. the effect of temperature on the performance of these cells is reported. As anticipated, owing to higher open‐circuit voltages these cells should have a lower temperature sensitivity of performance. the PERL cells demonstrated a normalized efficiency temperature variation of −2632 ppm °C−−1, which is the lowest ever reported for a silicon cell. However, PERC cells with a similarly high open‐circuit voltage showed a higher temperature sensitivity owing to the bulk resistance component, which limits the performance o
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