Dynamics of the pulsed picosecond laser ablation of silicon targets

摘要

This paper discusses the dynamics of nanoparticle formation during the pulsed picosecond laser ablation of samples of crystalline and porous silicon by means of elastic light scattering. Experimental measurements are presented of how the signal produced by scattering at the ablation products depends on the distance between the probe radiation and the target surface. The differences of these dependences for crystalline and porous silicon wafers are discussed. It was found that the scattering kinetics of the probe radiation on the ablation products has two characteristic peaks at times of about several microseconds and several tens of microseconds, respectively.