Intersubband absorption in strained InxGa1minus;xAs/Al0.4Ga0.6As (0le;xle;0.15) multiquantum wells

摘要

We report, for the first time, temperature‐dependent intersubband absorption data in doped pseudomorphic InxGa1−xAs/Al0.4Ga0.6As (0≤x≤0.15) multiquantum wells. In this composition range the absorption resonance varies in the range 6–7 &mgr;m for 50 A˚ wells, which agrees extremely well with theoretical calculations.