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Effect of valence state and incorporation site of cobalt dopants on the microstructure and electrical properties of 0.2PZN-0.8PZT ceramics

机译:钴掺杂剂的价态和掺入位点对0.2PZN-0.8PZT陶瓷组织和电学性能的影响

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摘要

A CoCO_3-added Pb((Zn_(1/3)Nb_(2/3))_(0.20)(Zr_(0.50)Ti_(0.50))_(0.80))O_3 (0.2PZN-0.8PZT) system was prepared and investigated. The results reveal that Co ions are present in the mixed valence form of +2 and +3, and their relative mole ratio depends on doping content. Co doping induces a phase transformation from the MPB to the tetragonal phase side, and the corresponding domain size increases accordingly. The solubility limit of Co ions in the perovskite matrix is near 0.2 wt. in CoCO_3 form. Below the solubility limit, Co ions enter the B sites of the oxygenic octahedral center, and the charge-compensating oxygen vacancies accelerate mass transport, which assists in the densification of the specimens. Above the solubility limit, excess Co ions gather in the grain boundaries and triple junctions, which facilitate the formation of a liquid phase with excess PbO and lead to remarkable grain growth. The resulting size effect plays a dominant role in improving the piezoelectric properties, which compensates for the hardening effect of acceptor doping. The optimum piezoelectric parameters are obtained at 0.8 wt. CoCO_3-doped 0.2PZN-0.8PZT system: d_(33) = 310 pC N~(-1), k_p = 0.66, and ε_(max) = 14,600.
机译:制备并研究了添加CoCO_3的Pb((Zn_(1/3)Nb_(2/3))_(0.20)(Zr_(0.50)Ti_(0.50))_(0.80))O_3(0.2PZN-0.8PZT)体系.结果表明,Co离子以+2和+3的混合价形式存在,其相对摩尔比取决于掺杂含量。共掺杂诱导了从MPB到四方相侧的相变,相应的畴大小相应增加。钙钛矿基质中 Co 离子的溶解度极限接近 0.2 wt.%,CoCO_3形式。在溶解度极限以下,Co离子进入含氧八面体中心的B位点,电荷补偿氧空位加速质量传递,这有助于样品的致密化。在溶解度极限以上,过量的 Co 离子聚集在晶界和三结中,这有利于形成具有过量 PbO 的液相,并导致显着的晶粒生长。由此产生的尺寸效应在改善压电性能方面起着主导作用,从而补偿了受体掺杂的硬化效应。在0.8 wt.%CoCO_3掺杂0.2PZN-0.8PZT体系下,得到的最佳压电参数为:d_(33) = 310 pC N~(-1),k_p = 0.66,ε_(max) = 14,600。

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