Influence of Annealing Conditions on the Sensing Properties of Oxygen Gas Sensor with (3-Ga_2O_3 Films Deposited by CSD Method for High Temperatures

摘要

Gallium oxide oxygen gas sensors have been investigated at the high temperature of 1000°C. An attention was paid for the influence of annealing conditions on the oxygen sensing mechanism of β- Ga_2O_3thin film. In order to analyze the characteristics of the sensors (stability, sensitivity, response time) we have prepared β- Ga_2O_3thm film using chemical solution deposition method (CSD). From AFM images and XRD patterns we have found out that the temperature and the time scale of annealing process influence the physical properties of P-Ga2O3 thin films. Gallium oxide prepared using CSD method makes it possible to detect oxygen in the gas stream mixture at high temperatures over 1000°C. It was found that the response time is in the range of seconds at 1000°C.