Uniaxial stress effects on double injection diodes

摘要

Uniaxial stress effects on the current‐voltage characteristics of Si and Ge double injection diodes are described and discussed. The threshold and the minimum voltages were decreased and the current flowing in the diode was increased with stress. These variations can qualitatively be explained by the change of mobility of the carrier and the capture cross section, and by the stress‐induced deep levels.