Simulation Study of Short-Channel Effect in MOSFET with Two-Dimensional Materials Channel

摘要

The short-channel effect (SCE) in a MOSFET with an atomically thin MoS2 channel was studied using a TCAD simulator. We derived the surface potential roll-up, drain-induced barrier lowering (DIBL), threshold voltage, and subthreshold swing (SS) as indexes of the SCE and analyzed their dependency on the channel thickness (number of atomic layers) and channel length. The minimum scalable channel length for a one-atomic-layer-thick MoS2 MOSFET was determined from the threshold voltage roll-off to be 7.6 nm. The one-layer-thick device showed a small DIBL of 87 mV/V at a 20 nm gate length. By using high-k gate insulator, an SS lower than 70 mV/dec is achievable in sub-10-nm-scale devices.