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Atomistic simulations of grain boundary segregation in nanocrystalline yttria-stabilized zirconia and gadolinia-doped ceria solidoxide electrolytes

机译:纳米晶氧化钇稳定氧化锆和钆掺杂氧化铈固体氧化物电解质晶界偏析的原子模拟

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摘要

Hybrid Monte Carlo-molecular dynamics simulations are carried out to study defect distributions near Z5(310)/001 pure tilt grain boundaries (GBs) in nanocrystalline yttria-stabilized zirconia and gadolinia-doped ceria. The simulations predict equilibrium distributions of dopant cations and oxygen vacancies in the vicinity of the GBs where both materials display considerable amounts of dopant segregation. The predictions are in qualitative agreement with various experimental observations. Further analyses show that the degree of dopant segregation increases with the doping level and applied pressure in both materials. The equilibrium segregation profiles are also strongly influenced by the microscopic structure of the GBs. The high concentration of oxygen vacancies at the GB interface due to lower vacancy formation energies triggers the dopant segregation, and the final segregation profiles are largely determined by the dopant-vacancy interaction.
机译:采用杂化蒙特卡罗分子动力学模拟方法研究了纳米晶氧化钇稳定氧化锆和钆掺杂氧化铈中Z5(310)/[001]纯倾斜晶界(GBs)附近的缺陷分布.模拟预测了GB附近掺杂阳离子和氧空位的平衡分布,其中两种材料都显示出相当多的掺杂偏析。这些预测与各种实验观察结果在质量上是一致的。进一步的分析表明,掺杂剂偏析程度随着掺杂水平和施加压力的增加而增加。平衡偏析曲线也受到GB微观结构的强烈影响。由于较低的空位形成能,GB界面处的高浓度氧空位触发了掺杂剂偏析,最终的偏析曲线主要由掺杂剂-空位相互作用决定。

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