Failure mechanisms in life‐tested hemts

摘要

AbstractFailure mechanisms in RF life‐tested high electron mobility transistors (HEMTs) were investigated both experimentally and theoretically. As a result of RF life testing the devices degraded by a decrease in drain current, transconductance, and gain and an increase in noise figure. Monte Carlo simulations confirmed the experimental conclusions that degradation resulted from gate metal interdiffusion and ohmic contact degradatio