Iron-doped semi-insulating InP has been grown by chloride vapour-phase epitaxy (VPE) using nitrogen mixed with hydrogen as carrier. Reducing hydrogen partial pressure by the introduction of nitrogen greatly improves the transport of FeCl2. The influence of hydrogen partial pressure on the Fe transport, and therefore on the Fe incorporation, has been studied theoretically and experimentally. With a relatively slow growth rate, InP film with a high Fe concentration is easily obtained. Quantum-well laser diodes with semi-insulating InP(Fe) stripe-confinement have been fabricated successfully. [References: 9]
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