Data are presented on the continuous‐wave (cw) room‐temperature (300 K) operation of multiple stripe AlxGa1−xAs‐GaAs quantum well heterostructure (QWH) laser arrays defined with native oxide contact masking. Use of the native AlxGa1−xAs(x≳0.7) oxide allows the fabrication of high‐performance devices without depositing foreign oxide or dielectric layers (SiO2or Si3N4). Arrays of ten 5‐&mgr;m‐wide emitters on 7 &mgr;m centers are coupled and operate at powers as high as 300 mW per facet, or at wider stripe spacing (5 &mgr;m emitters on 10 &mgr;m centers) as high as 400 mW per facet. These data indicate that current blocking layers of native oxide, formed from AlxGa1−xAs with H2O vapor in N2carrier gas (400 °C, 3 h), can be used in the construction of high‐power multiple stripe QWH arrays with excellent performance characteristics.
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