Influence of temperature on electron transport in bipolar devices

摘要

We evaluate the inelastic electron lifetime in thepregions of III‐V semiconductor devices with the aid of the exact temperature‐dependent random phase approximation valence‐band dielectric function. Our results demonstrate that at room temperature the low‐energy electron lifetime decreases markedly while hot‐electron lifetimes are reduced by several tens of percent. We subsequently repeat our calculations with the damped plasmon pole approximation for the dielectric function, obtaining acceptable values with a minimum of computational effort.