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Kinetics and mechanism of periodic structure formation at SiO_2/Mg interface

机译:SiO_2/Mg界面周期性结构形成的动力学和机理

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摘要

The interaction between SiO_2 (vitreous/fused silica and quartz) and Mg powder at 450-640 deg C was investigated employing a combination of X-ray diffraction and scanning electron microscopy with energy dispersive spectroscopy. The interaction resulted in the formation of a periodic layered structure, consisting of alternating MgO and Mg_2Si-rich layers, with typical thickness of 0.5-3 mu m. The reaction zone was found to grow by a parabolic law with activation energy of about 76 and 90 kJ/mol for fused silica/Mg and quartz/Mg interactions, respectively. The growth process is controlled by Mg diffusion to SiO_2 substrate. A qualitative model describing the formation of such a layered structure in the SiO_2/Mg system is presented.
机译:采用X射线衍射和扫描电子显微镜与能量色散光谱相结合的方法研究了SiO_2(玻璃/熔融石英和石英)与Mg粉在450-640°C下的相互作用。通过相互作用,形成了由MgO和富Mg_2Si层交替组成的周期性层状结构,典型厚度为0.5-3 μ m。反应区通过抛物线定律生长,熔融石英/镁和石英/镁相互作用的活化能分别约为 76 和 90 kJ/mol。生长过程由Mg扩散到SiO_2底物来控制。提出了一个定性模型,描述了SiO_2/Mg系统中这种层状结构的形成。

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