首页> 外文期刊>Acta materialia >DEBONDING BEHAVIOR BETWEEN ?-Si3N4 WHISKERS AND OXYNITRIDE GLASSES WITH OR WITHOUT AN EPITAXIAL ?-SiAlON INTERFACIAL LAYER
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DEBONDING BEHAVIOR BETWEEN ?-Si3N4 WHISKERS AND OXYNITRIDE GLASSES WITH OR WITHOUT AN EPITAXIAL ?-SiAlON INTERFACIAL LAYER

机译:?-Si3N4晶须与氮氧化合物玻璃之间的脱键行为,有或没有外延?-SiAlON界面层

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摘要

In order to gain insight on the influence ofintergranular glass on the fracture toughness of silicon nitride,the debonding behavior of the interface between the prismaticfaces of ?-Si3N4 whiskers and oxynitride glasses was investigatedin model systems based on various Si-(Al)-Y(Ln)-O-N (Ln:rare-earth) oxynitride glasses. It was found that while theinterfacial debonding strength increased when an epitaxial?`-SiAlON layer grew on the ?-Si3N4 whiskers, the critical anglefor debonding was lowered with increasing Al and O concentrationsin the SiAlON layer. Only in the absence of a SiAlON epitaxiallayer, were debonding conditions altered by residual stressesimposed on the interface due to thermal-mechanical mismatch. Apossible explanation for the effect of SiAlON formation and itscomposition on the debonding behavior is suggested by first-principles atomic cluster calculations. It is concluded that bytailoring the densification additives and hence the chemistry ofthe intergranular glass, it is possible to improve the fractureresistance of silicon nitride.
机译:为了深入了解晶间玻璃对氮化硅断裂韧性的影响,在基于各种Si-(Al)-Y(Ln)-O-N(Ln:稀土)氮氧化物玻璃的模型体系中,研究了?-Si3N4晶须棱柱面与氮氧化物玻璃界面的脱粘行为。结果表明,当外延?'-SiAlON层在?-Si3N4晶须上生长时,界面脱粘强度增加,而随着SiAlON层中Al和O浓度的增加,脱键的临界角降低。只有在没有SiAlON外延层的情况下,由于热机械不匹配,残余应力施加在界面上,脱粘条件才会改变。第一性原理原子团簇计算提出了SiAlON形成及其组成对脱键行为影响的可能解释.结论是,通过调整致密化添加剂以及晶间玻璃的化学性质,可以提高氮化硅的抗断裂性。

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