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Electromigration effect upon the Sn/Ag and Sn/Ni interfacial reactions at various temperatures

机译:不同温度下Sn/Ag和Sn/Ni界面反应的电迁移效应

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摘要

This study investigated the effects of the passage of electric currents of 500 A/cm~2 density through Sn/Ag couples annealed at 120 and 160 deg C. The results showed that when the direction of electron flow was from the Sn side to Ag, it enhanced the growth of the Ag_3Sn phase at the interface, and it retarded the Ag_3Sn phase growth when the electrons flowed from the Ag side to Sn. Similar results were found in the Sn/Ni system. The Ni_3Sn_4 phase formed in the Sn/Ni couples annealed at 160 and 180 deg C. The growth rate of the Ni_3Sn_4 phase increased when the electrons flowed from the Sn side to Ni side, and decreased if the direction of electron flow was reversed. The thickness of the reaction layers was measured, and the apparent effective charges Z_a* for Sn were determined. The values of Z_a* decreased with increasing temperatures, which indicated that the effect of electromigration on interfacial reactions became less significant at higher temperatures.
机译:本研究研究了密度为500 A/cm~2的电流通过120和160 °C退火的Sn/Ag电偶的影响。结果表明,当电子流动方向为Sn侧向Ag时,界面处Ag_3Sn相的生长增强,电子从Ag侧流向Sn时,延缓Ag_3Sn相生长,Sn/Ni体系也发现了类似的结果。在160和180°C退火的Sn/Ni对中形成的Ni_3Sn_4相。当电子从Sn侧流向Ni侧时,Ni_3Sn_4相的生长速率增加,而当电子流动方向相反时,相的生长速率降低。测量反应层的厚度,并测定Sn的表观有效电荷Z_a*。Z_a*值随温度的升高而降低,表明电迁移对界面反应的影响在较高温度下变得不那么显著。

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