Effective barrier height, conductionhyphen;band offset, and the influence ofphyphen;type dgr; doping at heterojunction interfaces: The case of the InAs/GaAs interface

摘要

We demonstrate that the effective band discontinuity at ann‐isotype heterojunction interface can be significantly modified by introducingp‐type &dgr; doping close to the interface during molecular beam epitaxy growth. This is shown for the case of the relaxed InAs‐GaAs interface where the band discontinuities with and without &dgr; doping have been measured by theI‐Vtechnique coupled with appropriate numerical modeling of the interface.