The role of substrate temperature and bias in the plasma deposition from tetramethylsilane

摘要

Thin transparent polymeric films have been deposited from low-pressure argon/tetramethylsilane radio-frequency glow discharges at controlled substrate bias and temperature. The effect of positive ion bombardment and substrate temperature on both film growth rate and chemical composition has been studied. An account of the post-discharge fast oxidation of films exposed to oxygen is also given. A general deposition mechanism is proposed.