Dual band millimetre wave 32 GHz and 40 GHz HEMT low noise amplifier for Ka band applications

摘要

This paper presents a design of dual band millimetre wave HEMT low noise amplifier (LNA) to produce a good gain level at 32 GHz and 40 GHz frequencies with a narrowband peak for Ka band applications. The proposed circuit is designed using 180-nm high electron mobility transistor (HEMT) and simulated in ADS tool. In order to achieve better gain at 32 GHz and 40 GHz, the proposed LNA has employed three stages of HEMT cascode amplifier with band pass filter and mixer. The simulation results show that the proposed LNA has obtained better forward transfer gain S21 of 13.173 dB and 13.113 dB at the frequencies 32 GHz and 40 GHz, respectively. Also, the input and output reflection coefficient S_(11) and S_(22) are lesser than -40 dB for the designed frequencies. Less noise figure of 2 dB is attained at 32 GHz and 40 GHz with the less power consumption of 1.32 mW.