Monolithic photoreceiver constructed with InGap/GaAs/InGaP MSM photodetectors and conventional GaAs MESFETs

摘要

We present a novel monolithic photoreceiver operating with a gain of 25 dB and a 3-dB bandwidth of above 2 GHz. In this photoreceiver, a high performance of GaAs metal-semiconductor-metal photodetector with InGaP buffer and capping layers was used. As well, a buffer logic invert circuit, feedback resistor and amplifier using the conventional MESFET's structure were designed to perform transimpedance amplifiers. The performances of the photoreceiver could be tuned through the feedback resistor.