Laser modulation of electroluminescence in thinhyphen;film ZnSthinsp;:thinsp;Mn devices

摘要

Large photoenhancement (by a factor of ≳100 in some devices) of electroluminescence in thin‐film ZnS : Mn devices has been observed near and above the electroluminescence threshold effects when the devices were excited with the near‐uv lines of an Ar+laser. The intensity of the photoenhanced electroluminescence was found to have a sublinear dependence on the laser intensity, saturate, and then decrease with increased laser power.