In the rumbered synthetic quartz crystal, it is desired for the wafer immediately after cutting by multi-wire-sew which is a grinding system by isolation abrasive grain not to have total thickness variation in the wafer which the warp is zero as much as possible, and influences final product. Here, the terms and conditions for realizing high-precision machining are examined. Although based on abrasive grain particle diameter, 800-1350m/min. carried out the high-speed run of the unidirectional wire driving system, and it turns out that the warp and the total thickness variation of a wafer can be brought close to zero by performing speed which pushes up a work upwards in the state where it synchronized with cutting speed. The performance of unidirectional wire driving system and bi-directional wire driving system are compared. The total thickness variation of the slicing wafer with which the unidirectional wire driving system is half value. The various quality items in slicing technology are examined, and the performance that is excellent in unidirectional multi-wire-saw is showed.
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