Intense THz-radiation from semiconductors under magnetic field irradiated with femtosecond laser pulses

摘要

The THz-radiation power from InAs reaches sub-mW level in a 1.7-T magnetic field irradiated with femtosecond laser pulses of 1.5-W average power. The THz-radiation power is related almost quadratically both to the magnetic field and to the excitation laser power. Furthermore, the THz-radiation spectrum is found to be controlled by the excitation pulsewidth, chirp direction of the excitation pulse, and the magnetic field.