Crystallization ofon plastic substrate by using a pulsed double-frequency YAG laser

摘要

Thin film transistors (TFTs) of microcrystalline silicon (μc-Si) can provide higher mobility and stability than that of a-Siand better uniformity than that of poly-Si TFTs, and it would be more suitable to be applied to larger-area AMOLEDs. Byusing 2wYAG laser annealing, crystalline μc-Si thin film on plastic substrate has been investigated and the proper laserenergy needed for crystallization has been indicated. It has been found that the dehydrogenation process at 300-450 °C fora few of hours could be omitted by decreasing the H content in the crystallization precursor, which is suitable for lasercrystallization on plastic substrates. The crystalline volume fraction (Xc) and the grain size of the resulted tc-Si could beadjusted by controlling the laser energy. By this method, the on plastic substrate with Xc and grain size is respectively85% (at the maximum) and 50 nm.