Dependence of the electron cross section for the acceptor gold level in silicon on the gold to donor ratio

摘要

Current transient spectroscopy was adapted to quasi‐compensated samples for measurement of the electron cross section for the acceptor gold level in Czochralski‐grown silicon in samples with various ratios of the deep level concentrationNTto the shallow level concentrationNDup toNT/ND= 0.83. The value obtained, (7.05±1)×10−17cm2, appears to be independent of theNT/NDratio, in good agreement with previous results for lowerNT/NDratios.