A 1.5 GHz low noise amplifier (LNA) was de- signed and fabricatedby using CMOS technology. The measured associated gain (G_a) of theLNA is 13.8 dB, the minimum noise figure (NF min) is 2.9 dB and theinput-referred third-order inter- cept point (IIP3) is -2.5 dBm at1.5 GHz. The LNA consumes 8.6 mA from a 3.0 V supply voltage. Thesemeasured results in- dicate a potential of short channel MOSFETs forhigh-frequency and low-noise applications.
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