机译:A 40-nm 0.5-V 12.9-pJ/Access 8T SRAM Using Low-Energy Disturb Mitigation Scheme
Kobe University, Kobe-shi, 657-8501 Japan;
Semiconductor Technology Academic Research Center (STARC), Yokohama-shi, 222-0033 Japan;
JST, CREST, Kobe-shi, 657-8501 Japan;