Formation of palladium-silicided shallow n{sup}+p junctions by phosphorus implantation into thin Pd or Pd{sub}2Si films on a silicon substrate and subsequent anneal

摘要

Formation of Pd-silicided shallow n{sup}+p junctions by implanting P{sup}+ ions into thin Pd or Pd{sub}2Si films on a substrate and subsequent annealing has been studied. Using these schemes, good n{sup}+p junctions can he formed at low annealingtemperatures. A Pd{sub}2Si-silicided shallow n{sup}+p junction with a leakage of about 2 nA/cm{sup}2 at -5 V and a junction depth of about 0.1{sub}μm can be obtained by annealing the sample with P{sup}+ implantation into thin Pd{sub}2Si films at 700℃.The thermal stability and silicide crystallinity of thin Pd{sub}2Si films on Si can be significantly improved due to the implanted, phosphorus dopant, as compared to the control samples without dopant incorporation.