Fabrication and Device Simulation of Single Nano-Scale Organic Static Induction Transistors

摘要

Analysis of local electronic property is important to comprehend organic semiconductor devices. We have measured current-voltage characteristics of single nano-scale organic static induction transistors (OSITs) using conductive atomic force microscope (AFM) probes. Then, we have simulated device characteristics of the nano-scale OSITs to clarify the relationship between device geometry and current-voltage characteristics. In this presentation, we report the experimental and simulation results, and propose an optimal design of SITs for higher on/off ratio.