Electrical Characterization of Nano-Floating Gated Silicon-on-Insulator Memory with In_2O_3 Nano-Particles Embedded in Polyimide Insulator

摘要

We fabricated the floating gate for silicon-on-insulator nonvolatile memory devices with In_2O_3 nano-particles embedded in polyimide insulator. Self-assembled In_2O_3 nano-particles were created by chemical reaction between the biphenyl dianhydride-p-phenylenediamine polymer precursor and indium films. The particles size and density of In_2O_3 nano-particles were 7nm and 6 × 10~(11)cm~(-2), respectively. The current-voltage and retention time of fabricated device were characterized by using semiconductor parameter analyzer. A significant threshold voltage shift of fabricated nano-floating gate memory devices obtained, because of the charging effects of In_2O_3 nano-particles. And a memory window measured about 1 V at initial status.