Physics-based short-channel current-voltage model for buried-channel MOSFETs

摘要

In this paper, we present a physics-based and analytical I-V model for submicron buried-channel MOSFETs. The model is based on the quasi 2D Poisson equation and includes the important short-channel effects such as drain-induced barrier lowering, channel-length modulation, velocity saturation, mobility degradation due to transverse electric field and the parasitic source/drain resistance. The model is accurate and consistent with the device physics, efficient for computation and smoothly continuous from linear to saturation regions. The accuracy of this model has been checked by the experimental data.