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机译:Hierarchically porous GaN thin films fabricated using high fluence Ar ion implantation of epitaxial GaN on sapphire
?ukasiewicz Research Network Institute of Microelectronics and Photonics||Lukasiewicz Research Network Institute of Microelectronics and Photonics: Siec Badawcza Lukasiewicz - Instytut Mikroelektroniki i Fotoniki;
?ukasiewicz Research Network Institute of Microelectronics and Photonics;
Warsaw University of Technology Centre for Advanced Materials and TechnologiesInstitute of High Pressure Physics Polish Academy of SciencesInternational Research Centre MagTop Institute of Physics Polish Academy of Sciences;
Argon; Ion implantation; Porous films; Porous gallium nitride; Scanning electron microscopy; Surface morphology;