Enhancement-Mode n-Channel GaN MOSFETs Using HfO_2 as a Gate Oxide

摘要

We have fabricated enhancement-mode n-channel GaN MOSFETs with overlap gate structure on a p-GaN using thick HfO_2 as a gate insulator. The maximum transconductance of 23 mS/mm which is 4 times larger, to our knowledge, than the best-reported value of the normally-otf GaN MOSFETs with SiO_2 gate oxide has been obtained.