Spin-on dielectric technology is positioned for introduction into 3OOmm manufacturing. We have proposed a simple strategy that will allow the industry to implement low- k{sub}(eff) interconnect dielectric solutions, which will provide extendibility of existing tool sets for at least three technology generations. Manufacturers are currently evaluating the use of these spin-on organic and inorganic materials at the l3Onm technology node and below for production of devices by mid to late 2001. The ability to use these novel, stacked structures and to achieve a much lower k{sub}(eff) should provide a powerful and straightforward technology pathway to meet the ever-accelerating time lines of semiconductor manufacturers.
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